silicon photo transistor 1. structure 1.1 chip size : 0.46mm x 0.46mm 1.2 chip thickness : 180 15um 1.3 metallization : top - al, bottom - au 1.4 passivation : silicon nitride 1.5 bonding pad size - emitter : 135um - base : 70um x 70um 2. guaranteed probed electrical characteristics (ta=25 ) symbol min typ max unit i ceo 50 na 500 1,050 nm p 880 nm bv ceo 90 v bv cbo 100 v bv ebo 6.7 v bv eco 7.1 v v ces 200 mv h fe 700 1,400 - 3. absolute maximum ratings (ta=25 ) symbol rating unit v ceo 90 v v eco 7.1 v eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr p eak sensing wavelengt h i c =5ma, i b =1ma i ce =500ua e-c voltage spectrum sensitivity c-e voltage c-b voltage i ec =50ua OPB0462 v ce =10v condition parameter c-e leakage current i eb =50ua i cb =50ua v ce =10v, ic=1ma auk corp. c-e saturation voltage e-b voltage parameter emitter-collector voltage collector-emitter voltage dc current gain
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